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Deep-red semiconductor monolithic mode-locked lasers 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 22, 页码: 221115
Authors:  Kong, L.;  Wang, H. L.;  Bajek, D.;  White, S. E.;  Forrest, A. F.;  Wang, X. L.;  Cui, B. F.;  Pan, J. Q.;  Ding, Y.;  Cataluna, M. A.
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Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址:;
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity 期刊论文
LASER PHYSICS LETTERS, 2010, 卷号: 7, 期号: 10, 页码: 707-710
Authors:  Zhang SB (Zhang Sh B.);  Cui QJ (Cui Q. J.);  Xiong B (Xiong B.);  Guo L (Guo L.);  Hou W (Hou W.);  Lin XC (Lin X. C.);  Li JM (Li J. M.);  Zhang, SB, Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Intracavity-frequency-doubled  High Efficiency  532 Nm  Straight Cavity  Nd-yag Laser  Power  Generation  
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文
SOLID STATE COMMUNICATIONS, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303
Authors:  Zhou, WZ (Zhou, W. Z.);  Lin, T (Lin, T.);  Shang, LY (Shang, L. Y.);  Yu, G (Yu, G.);  Huang, ZM (Huang, Z. M.);  Guo, SL (Guo, S. L.);  Gui, YS (Gui, Y. S.);  Dai, N (Dai, N.);  Chu, JH (Chu, J. H.);  Cui, LJ (Cui, L. J.);  Li, DL (Li, D. L.);  Gao, HL (Gao, H. L.);  Zeng, YP (Zeng, Y. P.);  Chu, JH, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址:
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Quantum Well  
半导体可饱和吸收镜及其制作方法 专利
专利类型: 发明, 申请日期: 2006-10-18, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王翠鸾;  王勇刚;  林涛;  王俊;  郑凯;  冯小明;  仲莉;  马杰慧;  马骁宇
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Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail:
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Characterization  Point Defects  Molecular Beam Epitaxy  Semiconducting Gallium Compounds  Semiconducting Indium Compounds  Semiconducting Ternary Compounds  1.55 Mu-m  Quantum-wells  Temperature  Gaas  
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 3, 页码: Art.No.033705
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail:
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Quantum-well Structures  Photoluminescence Spectra  Hemts  
Terahertz pulse generation with LT-GaAs photoconductive antenna 会议论文
Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, SEP 18-22, 2006
Authors:  Cui, LJ (Cui, L. J.);  Zeng, YP (Zeng, Y. P.);  Zhao, GZ (Zhao, G. Z.);  Cui, LJ, Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
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Temperature-grown Gaas  Carrier Dynamics  Emission  
采用光陷阱超小发散角高功率半导体激光器外延材料结构 专利
专利类型: 发明, 专利号: CN200910084036.1, 公开日期: 2011-08-30
Inventors:  王俊;  白一鸣;  崇锋;  熊聪;  仲莉;  韩淋;  王翠鸾;  冯小明;  刘媛媛;  刘素平;  马骁宇
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