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Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction
Zhou WZ (Zhou W. Z.); Lin T (Lin T.); Shang LY (Shang L. Y.); Yu G (Yu G.); Gao KH (Gao K. H.); Zhou YM (Zhou Y. M.); Wei LM (Wei L. M.); Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.); Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址: zhouwz@mail.sitp.ac.cn; jhchu@mail.sitp.ac.cn
2010
Source PublicationPHYSICAL REVIEW B
Volume81Issue:19Pages:Art. No. 195312
AbstractThe beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.
metadata_24国内
KeywordInxga1-xas/inp Quantum-wells Inversion Asymmetry Hole Systems Heterostructures Subband Layers
Funding OrganizationThis work was supported by the Special Funds for Major State Basic Research Project (Grant No. 2007CB924900), the National Natural Science Foundation of China (Grants No. 60906045, No. 60221502, and No. 60606025), the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20070420634), and the Scientific Research Foundation of GuangXi University (Grants No. X071109 and No. XB2090777).
Indexed BySCI
Language英语
Date Available2010-06-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11336
Collection半导体材料科学中心
Corresponding AuthorZhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址: zhouwz@mail.sitp.ac.cn; jhchu@mail.sitp.ac.cn
Recommended Citation
GB/T 7714
Zhou WZ ,Lin T ,Shang LY ,et al. Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction[J]. PHYSICAL REVIEW B,2010,81(19):Art. No. 195312.
APA Zhou WZ .,Lin T .,Shang LY .,Yu G .,Gao KH .,...&jhchu@mail.sitp.ac.cn.(2010).Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction.PHYSICAL REVIEW B,81(19),Art. No. 195312.
MLA Zhou WZ ,et al."Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction".PHYSICAL REVIEW B 81.19(2010):Art. No. 195312.
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