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Phase-coherent transport and spin-orbit interaction in InAs nanowires grown by molecule-beam epitaxy 期刊论文
Applied Physics Letters, 2015, 卷号: 106, 页码: 173105
Authors:  L. B. Wang;  J. K. Guo;  N. Kang;  Dong Pan;  Sen Li;  Dingxun Fan;  Jianhua Zhao;  H. Q. Xu
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Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer 期刊论文
Physical Review Letters, 2013, 卷号: 111, 期号: 2, 页码: 027203
Authors:  Nie, S. H.;  Chin, Y. Y.;  Liu, W. Q.;  Tung, J. C.;  Lu, J.;  Lin, H. J.;  Guo, G. Y.;  Meng, K. K.;  Chen, L.;  Zhu, L. J.;  Pan, D.;  Chen, C. T.;  Xu, Y. B.;  Yan, W. S.;  Zhao, J. H.
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Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址: zhouwz@mail.sitp.ac.cn;  jhchu@mail.sitp.ac.cn
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 12, 页码: Art.No.125007
Authors:  Liu, JQ (Liu, J. Q.);  Wang, JF (Wang, J. F.);  Qiu, YX (Qiu, Y. X.);  Guo, X (Guo, X.);  Huang, K (Huang, K.);  Zhang, YM (Zhang, Y. M.);  Hu, XJ (Hu, X. J.);  Xu, Y (Xu, Y.);  Xu, K (Xu, K.);  Huang, XH (Huang, X. H.);  Yang, H (Yang, H.);  Xu, K, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: kxu2006@sinano.ac.cn
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Thin-films  
与CMOS工艺兼容的硅高速光电探测器模拟与设计 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 193-197
Authors:  毛陆虹;  陈弘达;  吴荣汉;  唐君;  梁琨;  粘华;  郭维廉;  李树荣;  吴霞宛
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阵列化图形细胞的电调控方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  王娟;  裴为华;  郭凯;  陈弘达
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利用温度周期调制生长氧化锌材料的方法 专利
专利类型: 发明, 专利号: CN102206856A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  时凯;  刘祥林;  魏鸿源;  焦春美;  王俊;  李志伟;  宋亚峰;  杨少延;  朱勤生;  王占国
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