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分子束外延生长锑化物高迁移率量子阱材料研究 学位论文
, 北京: 中国科学院大学, 2014
Authors:  王娟
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High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan
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Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire 期刊论文
NANO LETTERS, 2013, 卷号: 13, 期号: 4, 页码: 1399-1404
Authors:  Yu, Ying;  Li, Mi-Feng;  He, Ji-Fang;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  He, Yu-Ming;  Wei, Yu-Jia;  He, Yu;  Zha, Guo-Wei;  Shang, Xiang-Jun;  Wang, Juan;  Wang, Li-Juan;  Wang, Guo-Wei
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阵列化图形细胞的电调控方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  王娟;  裴为华;  郭凯;  陈弘达
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带间级联激光器及其制备方法 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  邢军亮;  张宇;  徐应强;  王国伟;  王娟;  向伟;  任正伟;  牛智川
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InSb/GaSb量子点结构器件及生长方法 专利
专利类型: 发明, 公开日期: 2013-12-11
Inventors:  邢军亮;  张宇;  徐应强;  王国伟;  王娟;  向伟;  任正伟;  牛智川
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双波长锑化物应变量子阱半导体激光器及其制备方法 专利
专利类型: 发明, 公开日期: 2013-05-01
Inventors:  邢军亮;  张宇;  王国伟;  王娟;  王丽娟;  任正伟;  徐应强;  牛智川
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InAs/GaSb超晶格红外光电探测器及其制备方法 专利
专利类型: 发明, 公开日期: 2014-06-25
Inventors:  蒋洞微;  向伟;  王娟;  邢军亮;  王国伟;  徐应强;  任正伟;  贺振宏;  牛智川
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