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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Polarization-independent plasmonic subtractive color filtering in ultrathin Ag nanodisks with high transmission 期刊论文
Applied Optics, 2016, 卷号: 55, 期号: 1, 页码: 148-152
Authors:  X. L. HU;  L. B. SUN;  BEIBEI ZENG;  L. S. WANG;  Z. G. YU;  S. A. BAI;  S. M. YANG;  L. X. ZHAO;  Q. LI;  M. QIU;  R. Z. TAI;  H. J. FECHT;  J. Z. JIANG;  D. X. ZHANG
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Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 31189
Authors:  J. B. Li;  X. G. Wu;  G. W. Wang;  Y. Q. Xu;  Z. C. Niu;  X. H. Zhang
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Tunable bandgap in hybrid perovskite CH3NH3Pb(Br3−yXy) single crystals and photodetector applications 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 4, 页码: 045115
Authors:  L. Wang;  G. D. Yuan;  R. F. Duan;  F. Huang;  T. B. Wei;  Z. Q. Liu;  J. X. Wang;  J. M. Li
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Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 2, 页码: 025324
Authors:  R. W. Wu;  G. D. Yuan;  K. C. Wang;  T. B. Wei;  Z. Q. Liu;  G. H. Wang;  J. X. Wang;  J. M. Li
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Phase-coherent transport and spin-orbit interaction in InAs nanowires grown by molecule-beam epitaxy 期刊论文
Applied Physics Letters, 2015, 卷号: 106, 页码: 173105
Authors:  L. B. Wang;  J. K. Guo;  N. Kang;  Dong Pan;  Sen Li;  Dingxun Fan;  Jianhua Zhao;  H. Q. Xu
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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 16, 页码: 163708
Authors:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.;  Zhu, J. J.;  Le, L. C.;  Yang, J.;  He, X. G.;  Zhang, S. M.;  Zhang, B. S.;  Liu, J. P.;  Yang, H.
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Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth 期刊论文
ECS Solid State Lett., 2013, 卷号: 2, 期号: 9, 页码: 73-75
Authors:  J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
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Topological insulator-graphene junction for spin transport 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 101, 期号: 24, 页码: 243102
Authors:  Li, H.;  Zhang, H. B.;  Shao, J. M.;  Zhang, Y. Y.;  Yao, D. X.;  Yang, G. W.
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