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Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector 期刊论文
Applied Physics Letters, 2015, 卷号: 106, 期号: 26, 页码: 1-5
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shulong Lu
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Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um 期刊论文
IEEE Photonics Technology Letters, 2015, 卷号: 27, 期号: 21, 页码: 2276-2279
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shulong Lu
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Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra  
Effective recombination velocity of textured surfaces 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 19, 页码: Art. No. 193107
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Jiang DS (Jiang Desheng);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Xiong, KL, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Carrier Lifetime  Numerical Analysis  Semiconductor Thin Films  Surface Recombination  Surface Texture  
Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 12, 页码: Art. No. 124501
Authors:  Xiong KL (Xiong Kanglin);  He W (He Wei);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, CAS, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Resistance  Reciprocity  Diode  
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 10, 页码: Art.No.100206
Authors:  Lu SL (Lu, Shulong);  Nosho H (Nosho, Hidetaka);  Tackeuchi A (Tackeuchi, Atsushi);  Bian LF (Bian, Lifeng);  Dong JR (Dong, Jianrong);  Niu ZC (Niu, Zhichuan);  Lu, SL, Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan. 电子邮箱地址: sllu2008@sinano.ac.cn
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Alloys  
快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究 期刊论文
稀有金属, 2004, 卷号: 28, 期号: 3, 页码: 582-584
Authors:  边历锋;  江德生;  陆书龙
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量子纠缠态和半导体低维结构的光学性质研究 学位论文
, 北京: 中国科学院半导体研究所, 2003
Authors:  陆书龙
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