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Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering 期刊论文
Vacuum, 2016, 卷号: 125, 页码: 93-97
Authors:  Tianwei Zhou;  Yuhua Zuo;  Kai Qiu;  Jun Zheng;  Qiming Wang
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硅基纳米线有序生长及光学特性研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  邱凯
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Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications 期刊论文
Vacuum, 2015, 卷号: 119, 页码: 30-33
Authors:  Tianwei Zhou;  Yuhua Zuo;  Kai Qiu;  Jun Zheng;  Qiming Wang
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Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering 期刊论文
Vacuum, 2015, 卷号: 125, 页码: 93-97
Authors:  Tianwei Zhou;  Yuhua Zuo;  Kai Qiu;  Jun Zheng;  Qiming Wang
Adobe PDF(600Kb)  |  Favorite  |  View/Download:178/4  |  Submit date:2016/03/22
Wavelength tolerance of an all-optical multi-logic gate based on XPM in a HNLF 期刊论文
16th Opto-Electronics and Communications Conference, OECC2011, 2011, 页码: 573-574
Authors:  Qiu, Jifang;  Yin, Zuoshan;  Sun, Kai;  Chen, Lawrence R.;  Rochette, Martin;  Wu, Jian;  Zhao, Lingjuan;  Wang, Wei;  Qiu, J.(jifangqiu@semi.ac.cn)
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Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra  
Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 12, 页码: Art. No. 124501
Authors:  Xiong KL (Xiong Kanglin);  He W (He Wei);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, CAS, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Resistance  Reciprocity  Diode  
半导体纳米线有序阵列分布的制备方法 专利
专利类型: 发明, 公开日期: 2014-09-17
Inventors:  邱凯;  周天微;  左玉华
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