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Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Yang CB;  Zhang ML
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Gan  Ferromagnetic  Implantation  Annealing  
Effects of sputtering power on phase transition of vanadium oxide thin film by radio frequency magnetron sputtering 期刊论文
Tianjin Daxue Xuebao(Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology, 2011, 卷号: 44, 期号: 10, 页码: 847-851
Authors:  Liang, Ji-Ran;  Hu, Ming;  Liang, Xiu-Qin;  Kan, Qiang;  Chen, Tao;  Chen, Hong-Da;  Liang, J.-R.(ljiranbo@yahoo.com.cn)
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Annealing  Magnetron Sputtering  Oxide Films  Oxides  Photoelectron Spectroscopy  Thin Films  Vanadium  Vanadium Alloys  Vanadium Compounds  x Ray Diffraction  x Ray Diffraction Analysis  x Ray Photoelectron Spectroscopy  
Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 106104
Authors:  Ma, ZH;  Cao, Q;  Zuo, YH;  Zheng, J;  Xue, CL;  Cheng, BW;  Wang, QM;  Zuo, YH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,yhzuo@semi.ac.cn
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Infrared Response  Ion implantatIon  Rapid Thermal Annealing  Intermediate Band Solar Cell  Photodiode  
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
RARE METALS, 2011, 卷号: 30, 期号: 3, 页码: 247-251
Authors:  Liang JR;  Hu M;  Kan Q;  Liang XQ;  Wang XD;  Li GK;  Chen HD;  Liang, JR, Tianjin Univ, Sch Elect & Informat Technol, Tianjin 300072, Peoples R China. liang_jiran@tju.edu.cn
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Vanadium Dioxide  Infrared Transition  Diffraction Effect  Dual Ion Beam Sputtering  Annealing  
Effects of grain size on resistance and transmittance transition of vanadium oxide thin film 期刊论文
Cailiao Gongcheng/Journal of Materials Engineering, 2011, 期号: 4, 页码: 58-62+74
Authors:  Liang, Ji-Ran;  Hu, Ming;  Kan, Qiang;  Chen, Tao;  Liang, Xiu-Qin;  Chen, Hong-Da;  Liang, J.-R.(liang_jiran@tju.edu.cn)
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Annealing  Electric Properties  Grain Size And Shape  Optical Transitions  Oxide Films  Oxides  Thin Films  Vanadium  Vanadium Alloys  Vanadium Compounds  
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
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Aluminum  Annealing  Ion implantatIon  Pressure Effects  Semiconducting Silicon Compounds  Silicon Carbide  Surface Roughness  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition 期刊论文
VACUUM, 2010, 卷号: 84, 期号: 11, 页码: 1280-1286
Authors:  Zhu BL (Zhu B. L.);  Zhao XZ (Zhao X. Z.);  Su FH (Su F. H.);  Li GH (Li G. H.);  Wu XG (Wu X. G.);  Wu J (Wu J.);  Wu R (Wu R.);  Zhu, BL, Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China. E-mail Address: zhubailin97@hotmail.com
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Zno  Pulsed Laser Deposition (Pld)  Annealing Treatment  Photoluminescence (Pl)  Oxide Thin-films  Substrate-temperature  Oxygen-pressure  Electrical-properties  Pld Technique  Al Films  Emission  
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 11, 页码: Art. No. 113921
Authors:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com
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Annealing  
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 8, 页码: Art. No. 083713
Authors:  Cai PF;  You JB;  Zhang XW;  Dong JJ;  Yang XL;  Yin ZG;  Chen NF;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Annealing  Carrier Density  Carrier Mobility  Diffusion  Electrical Conductivity  Electrical Resistivity  Hydrogen  Ii-vi Semiconductors  Impurity States  Interstitials  Light Transmission  Plasma Materials Processing  Semiconductor Thin Films  Sputter Deposition  Vacancies (Crystal)  Visible Spectra  Wide Band Gap Semiconductors  Zinc Compounds