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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:
Jiang LJ
;
Wang XL
;
Xiao HL
;
Wang ZG
;
Yang CB
;
Zhang ML
Adobe PDF(712Kb)
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Submit date:2011/07/07
Gan
Ferromagnetic
Implantation
Annealing
Effects of sputtering power on phase transition of vanadium oxide thin film by radio frequency magnetron sputtering
期刊论文
Tianjin Daxue Xuebao(Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology, 2011, 卷号: 44, 期号: 10, 页码: 847-851
Authors:
Liang, Ji-Ran
;
Hu, Ming
;
Liang, Xiu-Qin
;
Kan, Qiang
;
Chen, Tao
;
Chen, Hong-Da
;
Liang, J.-R.(ljiranbo@yahoo.com.cn)
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View/Download:1142/425
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Submit date:2012/06/14
Annealing
Magnetron Sputtering
Oxide Films
Oxides
Photoelectron Spectroscopy
Thin Films
Vanadium
Vanadium Alloys
Vanadium Compounds
x Ray Diffraction
x Ray Diffraction Analysis
x Ray Photoelectron Spectroscopy
Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material
期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 106104
Authors:
Ma, ZH
;
Cao, Q
;
Zuo, YH
;
Zheng, J
;
Xue, CL
;
Cheng, BW
;
Wang, QM
;
Zuo, YH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,yhzuo@semi.ac.cn
Adobe PDF(617Kb)
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Submit date:2012/02/06
Infrared Response
Ion implantatIon
Rapid Thermal Annealing
Intermediate Band Solar Cell
Photodiode
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
RARE METALS, 2011, 卷号: 30, 期号: 3, 页码: 247-251
Authors:
Liang JR
;
Hu M
;
Kan Q
;
Liang XQ
;
Wang XD
;
Li GK
;
Chen HD
;
Liang, JR, Tianjin Univ, Sch Elect & Informat Technol, Tianjin 300072, Peoples R China. liang_jiran@tju.edu.cn
Adobe PDF(480Kb)
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Submit date:2011/07/05
Vanadium Dioxide
Infrared Transition
Diffraction Effect
Dual Ion Beam Sputtering
Annealing
Effects of grain size on resistance and transmittance transition of vanadium oxide thin film
期刊论文
Cailiao Gongcheng/Journal of Materials Engineering, 2011, 期号: 4, 页码: 58-62+74
Authors:
Liang, Ji-Ran
;
Hu, Ming
;
Kan, Qiang
;
Chen, Tao
;
Liang, Xiu-Qin
;
Chen, Hong-Da
;
Liang, J.-R.(liang_jiran@tju.edu.cn)
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Submit date:2012/06/13
Annealing
Electric Properties
Grain Size And Shape
Optical Transitions
Oxide Films
Oxides
Thin Films
Vanadium
Vanadium Alloys
Vanadium Compounds
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Authors:
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
;
Wu, H.(hlwu@semi.ac.cn)
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Submit date:2012/06/14
Aluminum
Annealing
Ion implantatIon
Pressure Effects
Semiconducting Silicon Compounds
Silicon Carbide
Surface Roughness
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:
Yang AL
;
Song HP
;
Liang DC
;
Wei HY
;
Liu XL
;
Jin P
;
Qin XB
;
Yang SY
;
Zhu QS
;
Wang ZG
;
Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn
;
xlliu@semi.ac.cn
Adobe PDF(341Kb)
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Submit date:2010/05/04
Alloying
Annealing
Electrical Conductivity
Excitons
Ii-vi Semiconductors
Magnesium Compounds
Mocvd Coatings
Photoluminescence
Positron Annihilation
Semiconductor Thin Films
Vacancies (Crystal)
Wide Band Gap Semiconductors
Zinc Compounds
Semiconductors
Emission
Origin
Diodes
Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition
期刊论文
VACUUM, 2010, 卷号: 84, 期号: 11, 页码: 1280-1286
Authors:
Zhu BL (Zhu B. L.)
;
Zhao XZ (Zhao X. Z.)
;
Su FH (Su F. H.)
;
Li GH (Li G. H.)
;
Wu XG (Wu X. G.)
;
Wu J (Wu J.)
;
Wu R (Wu R.)
;
Zhu, BL, Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China. E-mail Address: zhubailin97@hotmail.com
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Submit date:2010/07/05
Zno
Pulsed Laser Deposition (Pld)
Annealing Treatment
Photoluminescence (Pl)
Oxide Thin-films
Substrate-temperature
Oxygen-pressure
Electrical-properties
Pld Technique
Al Films
Emission
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 11, 页码: Art. No. 113921
Authors:
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
;
Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com
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Submit date:2010/04/03
Annealing
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 8, 页码: Art. No. 083713
Authors:
Cai PF
;
You JB
;
Zhang XW
;
Dong JJ
;
Yang XL
;
Yin ZG
;
Chen NF
;
Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
Adobe PDF(341Kb)
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Submit date:2010/03/08
Annealing
Carrier Density
Carrier Mobility
Diffusion
Electrical Conductivity
Electrical Resistivity
Hydrogen
Ii-vi Semiconductors
Impurity States
Interstitials
Light Transmission
Plasma Materials Processing
Semiconductor Thin Films
Sputter Deposition
Vacancies (Crystal)
Visible Spectra
Wide Band Gap Semiconductors
Zinc Compounds