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Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors:  Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors:  Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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基于二维材料的Ⅲ族氮化物外延 期刊论文
化学学报, 2017, 期号: 3, 页码: 271-279
Authors:  谭晓宇;  杨少延;  李辉杰
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III族氮化物半导体材料生长及物性研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  李辉杰
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Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:  Li, Huijie;  Liu, Xianglin;  Feng, Yuxia;  Wei, Hongyuan;  Yang, Shaoyan
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113712
Authors:  Li HJ (Li, Huijie);  Liu XL (Liu, Xianglin);  Wang JX (Wang, Jianxia);  Jin DD (Jin, Dongdong);  Zhang H (Zhang, Heng);  Yang SY (Yang, Shaoyan);  Liu SM (Liu, Shuman);  Mao W (Mao, Wei);  Hao Y (Hao, Yue);  Zhu QS (Zhu, QinSheng);  Wang ZG (Wang, Zhanguo)
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制备非极性面或半极性面单晶半导体自支撑衬底的方法 专利
专利类型: 发明, 公开日期: 2014-07-30
Inventors:  张恒;  魏鸿源;  杨少延;  赵桂娟;  金东东;  王建霞;  李辉杰;  刘祥林;  王占国
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半极性面氮化镓基发光二极管及其制备方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  项若飞;  汪连山;  赵桂娟;  金东东;  王建霞;  李辉杰;  张恒;  冯玉霞;  焦春美;  魏鸿源;  杨少延;  王占国
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