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硅衬底氮化镓材料制备生长研究 学位论文
, 北京: 中国科学院大学, 2015
Authors:  冯玉霞
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Si衬底  Aln  Gan  生长机制  应力  
Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:  Li, Huijie;  Liu, Xianglin;  Feng, Yuxia;  Wei, Hongyuan;  Yang, Shaoyan
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法 专利
专利类型: 发明, 公开日期: 2014-06-11
Inventors:  冯玉霞;  杨少延;  魏鸿源;  焦春美;  孔苏苏
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利用硅衬底制备垂直结构氮化镓基发光二极管器件的方法 专利
专利类型: 发明, 公开日期: 2014-03-12
Inventors:  杨少延;  冯玉霞;  魏鸿源;  焦春美;  赵桂娟;  汪连山;  刘祥林;  王占国
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半极性面氮化镓基发光二极管及其制备方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  项若飞;  汪连山;  赵桂娟;  金东东;  王建霞;  李辉杰;  张恒;  冯玉霞;  焦春美;  魏鸿源;  杨少延;  王占国
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一种氮化铝一维纳米结构材料的制备方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  孔苏苏;  李辉杰;  冯玉霞;  赵桂娟;  魏鸿源;  杨少延;  王占国
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