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Scattering due to large cluster embedded in quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 5, 页码: 052105
Authors:  Liu, Changbo;  Zhao, Guijuan;  Liu, Guipeng;  Song, Yafeng;  Zhang, Heng;  Jin, Dongdong;  Li, Zhiwei;  Liu, Xianglin;  Yang, Shaoyan;  Zhu, Qinsheng;  Wang, Zhanguo
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Dielectric and barrier thickness fluctuation scattering in Al2O3AlGaNGaN double 期刊论文
Thin solid films, 2013, 卷号: 534, 页码: 655–658
Authors:  Dong Jia, Yanwu Lu , Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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Determination of polar C-plane and nonpolar A-plane AlN-GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
physica status solidi (b), 2013, 卷号: 1, 期号: 4
Authors:  Huijie Li, Xianglin Liu, Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu, Wei Mao, Yue Hao, Qinsheng Zhu, Zhanguo Wang
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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
SOLID STATE COMMUNICATIONS, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
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Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells 期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2013, 卷号: 52, 页码: 150–154
Authors:  Liu, Changbo;  Yang, Shaoyan;  Shi, Kai;  Liu, Guipeng;  Zhang, Heng;  Jin, Dongdong;  Gu, Chengyan;  Zhao, Guijuan;  Sang, Ling;  Liu, Xianglin;  Zhu, Qinsheng;  Wang, Zhanguo
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Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
THIN SOLID FILMS, 2013, 卷号: 534, 页码: 655-658
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
Adobe PDF(570Kb)  |  Favorite  |  View/Download:866/237  |  Submit date:2013/08/27
Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
Thin Solid Films, 2013, 卷号: 534, 页码: 655–658
Authors:  Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
Adobe PDF(570Kb)  |  Favorite  |  View/Download:242/84  |  Submit date:2014/05/08
Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113712
Authors:  Li HJ (Li, Huijie);  Liu XL (Liu, Xianglin);  Wang JX (Wang, Jianxia);  Jin DD (Jin, Dongdong);  Zhang H (Zhang, Heng);  Yang SY (Yang, Shaoyan);  Liu SM (Liu, Shuman);  Mao W (Mao, Wei);  Hao Y (Hao, Yue);  Zhu QS (Zhu, QinSheng);  Wang ZG (Wang, Zhanguo)
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Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 562
Authors:  Wei W (Wei, Wei);  Qin ZX (Qin, Zhixin);  Fan SF (Fan, Shunfei);  Li ZW (Li, Zhiwei);  Shi K (Shi, Kai);  Zhu QS (Zhu, Qinsheng);  Zhang GY (Zhang, Guoyi)
Adobe PDF(529Kb)  |  Favorite  |  View/Download:881/284  |  Submit date:2013/04/18