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无权访问的条目 学位论文
Authors:  李方政
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Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文
Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006
Authors:  Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang
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Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors:  Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105
Authors:  Guijuan Zhao;   Lianshan Wang;   Huijie Li;   Yulin Meng;   Fangzheng Li;   Shaoyan Yang;   Zhanguo Wang
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The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors:  Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
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Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
Authors:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
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Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文
Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329
Authors:  Fangzheng Li;  Lianshan Wang;  Guijuan Zhao;  Yulin Meng;  Huijie Li;  Shaoyan Yang;  Zhanguo Wang
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Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文
Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329
Authors:  Fangzheng Li;  Lianshan Wang;  Guijuan Zhao;  Yulin Meng;  Huijie Li;  Shaoyan Yang;  Zhanguo Wang
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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 7, 页码: 078102
Authors:  Zesheng Ji;  Lianshan Wang;  Guijuan Zhao;  Yulin Meng;  Fangzheng Li;  Huijie Li;  Shaoyan Yang;  Zhanguo Wang
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Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文
SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497
Authors:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Zesheng Ji;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
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