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| Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors: Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo
 Adobe PDF(1290Kb) |  Favorite | View/Download：1/0 | Submit date：2019/11/15 |
| Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105
Authors: Guijuan Zhao; Lianshan Wang; Huijie Li; Yulin Meng; Fangzheng Li; Shaoyan Yang; Zhanguo Wang
Adobe PDF(1833Kb) | Favorite | View/Download：1/0 | Submit date：2019/11/15 |
| The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors: Li Fangzheng; Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Chen Yanan; Yang Shaoyan; Jin Peng; Wang Zhanguo
Adobe PDF(190Kb) | Favorite | View/Download：2/0 | Submit date：2019/11/15 |
| Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors: Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Yang Shaoyan; Wang Zhanguo
Adobe PDF(315Kb) | Favorite | View/Download：1/0 | Submit date：2019/11/15 |
| Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
Authors: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang
Adobe PDF(1656Kb) | Favorite | View/Download：1/0 | Submit date：2019/11/15 |
| 基于二维材料的Ⅲ族氮化物外延 期刊论文
化学学报, 2017, 期号: 3, 页码: 271-279
Authors: 谭晓宇; 杨少延; 李辉杰
Adobe PDF(3684Kb) | Favorite | View/Download：64/2 | Submit date：2018/05/23 |
| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文
Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329
Authors: Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li; Shaoyan Yang; Zhanguo Wang
Adobe PDF(1695Kb) | Favorite | View/Download：62/0 | Submit date：2018/05/23 |
| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文
Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329
Authors: Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li; Shaoyan Yang; Zhanguo Wang
Adobe PDF(1695Kb) | Favorite | View/Download：62/4 | Submit date：2018/05/23 |
| Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 7, 页码: 078102
Authors: Zesheng Ji; Lianshan Wang; Guijuan Zhao; Yulin Meng; Fangzheng Li; Huijie Li; Shaoyan Yang; Zhanguo Wang
Adobe PDF(1451Kb) | Favorite | View/Download：63/2 | Submit date：2018/05/23 |
| Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文
SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497
Authors: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang
Adobe PDF(4061Kb) | Favorite | View/Download：66/0 | Submit date：2018/05/23 |
