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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Hou, LP
;
Wang, W
;
Zhu, HL
;
Wang, BJ
;
Zhou, F
;
Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(258Kb)
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浏览/下载:1639/444
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提交时间:2010/03/29
Dfb Laser Diode
Electroabsorption Modulator
Spot-size Converters
Selective Area Growth
Quantum Well Intermixing
Dual-core Structure
Monolithic Integration
Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Xie, HY
;
Pan, JQ
;
Yang, H
;
Zhao, LJ
;
Zhu, HL
;
Wang, LF
;
Cui, AH
;
Wang, W
;
Xie, HY, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)
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  |  
浏览/下载:1589/404
  |  
提交时间:2010/03/29
Wide Gain Bandwidth
Dfb Laser
Non-identical Quantum Well
Cwdm
Superluminescent Diodes
Optical study of electronic states in GaAsN
会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:
Luo XD
;
Yang CL
;
Huang JS
;
Xu ZY
;
Liu J
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
;
Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)
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浏览/下载:1471/265
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Temperature Photoluminescence
Quantum-well
Alloys
Relaxation
Gaas1-xnx
Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Yu LJ
;
Guo WH
;
Huang YZ
;
Yu LJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(77Kb)
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  |  
浏览/下载:1227/268
  |  
提交时间:2010/10/29
Semiconductor Optical Amplifier
Strained Quantum Well
Optical Waveguide
Polarization
Quantum-well Lasers
Small signal equivalent circuit model of vertical cavity surface emitting lasers
会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:
Mao LH
;
Chen HD
;
Tang J
;
Liang K
;
Wu RB
;
Nian H
;
Guo WL
;
Wu XW
;
Mao LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(140Kb)
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浏览/下载:1312/397
  |  
提交时间:2010/10/29
Quantum-well Lasers
Exploration on enhancing innovation capability of functional information materials in China
会议论文
RARE METAL MATERIALS AND ENGINEERING, 30, XIAN, PEOPLES R CHINA, SEP 16-20, 2001
作者:
Wang ZG
;
Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1892Kb)
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浏览/下载:895/109
  |  
提交时间:2010/11/15
Information Technology
Semiconductor Micro-structural Materials
Superlattice And Quantum Well Materials
Quantum Wire And Quantum Dot Materials
Self-assembled quantum dots, wires and quantum-dot lasers
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Wang ZG
;
Chen YH
;
Liu FQ
;
Xu B
;
Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(289Kb)
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收藏
  |  
浏览/下载:1293/323
  |  
提交时间:2010/11/15
Low Dimensional Structures
Strain
Molecular Beam Epitaxy
Quantum Dots
Semiconducting Iii-v Materials
Laser Diodes
Well Lasers
Tunable MQW-DBR lasers using selective area growth
会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:
Liu GL
;
Wang W
;
Zhang JY
;
Chen WX
;
Xu GY
;
Zhang BJ
;
Zhou F
;
Wang XJ
;
Zhu HL
;
Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(199Kb)
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  |  
浏览/下载:1531/418
  |  
提交时间:2010/10/29
Selective Area Growth
Multi-quantum-well
Distributed Bragg Reflector Laser
Mocvd
Tunable Laser
Epitaxy
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:
Ma XY
;
Cao Q
;
Wang ST
;
Guo L
;
Wang ZM
;
Wang LM
;
He GP
;
Yang YL
;
Zhang HQ
;
Zhou XN
;
Chen LH
;
Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)
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  |  
浏览/下载:1172/273
  |  
提交时间:2010/10/29
Ingaasp
Strained Layer Quantum Well
Laser Diode
Mocvd
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:
Yang GW
;
Xu ZT
;
Xu JY
;
Ma XY
;
Zhang JM
;
Chen LH
;
Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)
  |  
收藏
  |  
浏览/下载:1364/382
  |  
提交时间:2010/10/29
Strained Quantum Well
Semiconductor Lasers