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Unusual carrier thermalization in a dilute GaAs1-xNx alloy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.061905
Authors:  Tan PH;  Xu ZY;  Luo XD;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Tan, PH, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: pt290@cam.ac.uk;  yong_zhang@nrel.gov
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Photoluminescence  
Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 20, 页码: Art.No.201917
Authors:  Wang WJ;  Yang XD;  Ma BS;  Sun Z;  Su FH;  Ding K;  Xu ZY;  Li GH;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Wang, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: wwjgr@mail.semi.ac.cn
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Pair Luminescence  Gap-n  Gaas  Excitons  Alloy  
Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study 期刊论文
PHYSICAL REVIEW B, 2006, 卷号: 73, 期号: 20, 页码: Art.No.205205
Authors:  Tan PH (Tan P. H.);  Luo XD (Luo X. D.);  Xu ZY (Xu Z. Y.);  Zhang Y (Zhang Y.);  Mascarenhas A (Mascarenhas A.);  Xin HP (Xin H. P.);  Tu CW (Tu C. W.);  Ge WK (Ge W. K.);  Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail: pinghengtan@hotmail.com;  yong_zhang@nrel.gov
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Hot pHotoluminescence  Gallium-arsenide  Gaas  Semiconductors  Luminescence  Scattering  
Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001 期刊论文
PHYSICAL REVIEW B, 2005, 卷号: 71, 期号: 4, 页码: Art.No.045213
Authors:  Ma BS;  Su FH;  Ding K;  Li GH;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Ma, BS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
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Electronic-structure  
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
Authors:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
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Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
Alloy states in dilute GaAs1-xNx alloys (x < 1%) 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 82, 期号: 11, 页码: 1697-1699
Authors:  Luo XD;  Huang JS;  Xu ZY;  Yang CL;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices Microstruct,Beijing 100083,Peoples R China.
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Band-gap Reduction  Gaasn  Excitons  
Optical study of electronic states in GaAsN 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
Authors:  Luo XD;  Yang CL;  Huang JS;  Xu ZY;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
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Molecular-beam Epitaxy  Temperature Photoluminescence  Quantum-well  Alloys  Relaxation  Gaas1-xnx  
Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy Beijing, China, 11-15 september 2000 - Preface 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: IX-IX
Authors:  Kong M;  Tu CW;  Kong M,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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