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Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 800-803
Authors:  Fang CB (Fang Cebao);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Hu GX (Hu Guoxin);  Wang CM (Wang Cuimei);  Wang XY (Wang Xiaoyan);  Li JP (Li Jianping);  Wang JX (Wang Junxi);  Li CJ (Li Chengji);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Deep Defect  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 791-793
Authors:  Wang XL (Wang Xiaoliang);  Wang CM (Wang Cuimei);  Hu GX (Hu Guoxin);  Mao HL (Mao Hongling);  Fang CB (Fang Cebao);  Wang JX (Wang Junxi);  Ran JX (Ran Junxue);  Li HP (Li Hanping);  Li JM (Li Jinmin);  Wang ZG (Wang, Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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2deg  
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 835-839
Authors:  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Ma ZY (Ma Zhiyong);  Ran JX (Ran Junxue);  Wang CM (Wang Cuimei);  Mao HL (Mao Hongling);  Tang H (Tang Han);  Li HP (Li Hanping);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Jinmin LM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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2deg  
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Authors:  Wang CM;  Wang XL;  Hu GX;  Wang JX;  Xiao HL;  Li JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1262/367  |  Submit date:2010/04/11
2deg  Mocvd  Semiconducting Iii-v Materials  Hemt  Power Devices  Heterostructures  Passivation  Sapphire  Algan  Field  Gas  
Growth and characterization of InN on sapphire substrate by RF-MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 3-4, 页码: 401-406
Authors:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Wang, ZG;  Xiao, HL, Chinese Acad Sci, Inst Semicond, Novel Mat Grp, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hlxiao@red.semi.ac.cn
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Photoluminescence  
High-quality GaN grown by gas-source MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 386-389
Authors:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(103Kb)  |  Favorite  |  View/Download:924/276  |  Submit date:2010/08/12
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  Molecular-beam Epitaxy  Heterostructures  Sapphire  Diodes