中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共40条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Multi channel micro neural probe fabricated with SOI 会议论文
2009 ICME INTERNATIONAL CONFERENCE ON COMPLEX MEDICAL ENGINEERING, Tempe, AZ, APR 09-11, 2009
作者:  Wang SJ (Wang Shujing);  Pei WH (Pei Weihua);  Guo K (Guo Kai);  Gui Q (Gui Qiang);  Wang Y (Wang Yu);  Zhang X (Zhang Xu);  Tang J (Tang Jun);  Chen HD (Chen Hongda);  Pei, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(231Kb)  |  收藏  |  浏览/下载：1923/473  |  提交时间：2010/03/09
Microelectrode Arrays  
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)  |  收藏  |  浏览/下载：1853/335  |  提交时间：2010/03/09
Molecular-beam Epitaxy  
Design and Realization of Index-Coupled DFB Laser with Sampled Grating 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang H;  Zhu HL;  Chen XF;  Li JS;  Wang LS;  Zhang W;  Wang W;  Wang, H, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1502/372  |  提交时间：2010/03/09
Tuning Range  
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1734/433  |  提交时间：2010/03/09
Algan/gan Hemts  
Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Li GK;  Wang XD;  Liang JR;  Ji A;  Hu M;  Yang F;  Liu J;  Wu NJ;  Chen HD;  Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(803Kb)  |  收藏  |  浏览/下载：1697/420  |  提交时间：2010/03/09
Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Wang XD;  Li GK;  Liang JR;  Ji A;  Hu M;  Yang FH;  Liu J;  Wu NJ;  Chen HD;  Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
Adobe PDF(706Kb)  |  收藏  |  浏览/下载：1753/352  |  提交时间：2010/03/09
V2o5 Thin-films  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(386Kb)  |  收藏  |  浏览/下载：1700/355  |  提交时间：2010/03/09
Pockels Effect  
Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Hu HY;  Lu L;  Du W;  Liu HW;  Kan Q;  Wang CX;  Xu XS;  Chen HD;  Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1854/537  |  提交时间：2010/03/09
Gan  
Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Yu XG;  Chen SW;  Yu JZ;  Wang QM;  Yu, XG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(432Kb)  |  收藏  |  浏览/下载：1312/325  |  提交时间：2010/03/09
Optoelectronics Devices  
Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Zhang YX;  Liao ZY;  Sun Y;  Chen WX;  Zhao LJ;  Zhu HL;  Wang W;  Zhang, YX, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(216Kb)  |  收藏  |  浏览/下载：1643/307  |  提交时间：2010/03/09
Optimization