SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors
Li GK; Wang XD; Liang JR; Ji A; Hu M; Yang F; Liu J; Wu NJ; Chen HD; Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
2008
Conference Name2nd IEEE International Nanoelectronics Conference
Source Publication2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
PagesVOLS 1-3: 921-923
Conference DateMAR 24-27, 2008
Conference PlaceShanghai, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-1-4244-1572-4
metadata_83[li, guike; liu, jian; wu, nanjian] chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
AbstractA novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.
Subject Area微电子学
Funding OrganizationIEEE.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7756
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Li GK,Wang XD,Liang JR,et al. Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 921-923.
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