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Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
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Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 5, 页码: Article no.53519
Authors:  Yu JL;  Chen YH;  Jiang CY;  Liu Y;  Ma H;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Molecular-beam Epitaxy  Inversion Asymmetry  Heterostructures  Segregation  Interface  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
Photorefractive effects in ZnO nanorod doped liquid crystal cell 期刊论文
APPLIED OPTICS, 2011, 卷号: 50, 期号: 8, 页码: 1101-1104
Authors:  Guo YB;  Chen YH;  Xiang Y;  Qu SC;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Holographic Grating Formation  Luminescence  Fields  Films  
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 48, 页码: Art. No. 485102
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Jia CH (Jia C. H.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.);  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
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Dependence  Spectra  
Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 2, 页码: 511-514
Authors:  Jia CH;  Chen YH;  Zhou XL;  Yang AL;  Zheng GL;  Liu;  XL;  Yang SY;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Batio3  Srtio3  
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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Mu-m  Temperature  Detectors  Operation  
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 1, 页码: Art. No. 013516
Authors:  Yu JL (Yu J. L.);  Chen YH (Chen Y. H.);  Ye XL (Ye X. L.);  Jiang CY (Jiang C. Y.);  Jia CH (Jia C. H.);  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@semi.ac.cn
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Molecular-beam Epitaxy  Strain Relaxation  Growth Temperature  Interface  Alloys  Gaas  Heterostructures  Microstructure  Ganxas1-x  Nitrogen