Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J
	Hu HY; Lu L; Du W; Liu HW; Kan Q; Wang CX; Xu XS; Chen HD; Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: J8410-J8410
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[hu, haiyang; lu, lin; du, wei; liu, hongwei; kan, qiang; wang, chunxia; xu, xingsheng; chen, hongda] chinese acad sci, inst semicond, beijing 100864, peoples r china
摘要	For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.
关键词	Gan
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7824
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
推荐引用方式 GB/T 7714	Hu HY,Lu L,Du W,et al. Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: J8410-J8410.

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