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Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals 期刊论文
MICROGRAVITY SCIENCE AND TECHNOLOGY, 2006, 卷号: 17, 期号: 1, 页码: 40244
Authors:  Zhou YF;  Pan ZL;  Liu Y;  Ai F;  Chen NF;  Huang YY;  He W;  Tang LA;  Wang JC;  Zhou, YF, Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China. E-mail: yfzhou@sunm.shcnc.ac.cn
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Space growth studies of Ce-doped Bi12SiO20 single crystal 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 卷号: 113, 期号: 3, 页码: 179-183
Authors:  Zhou YF;  Wang JC;  Tang LA;  Pan ZL;  Chen NF;  Chen WC;  Huang YY;  He W;  Zhou, YF, Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China. 电子邮箱地址: yfzhou@sunm.shcnc.ac.cn
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Bridgman Technique  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
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Molecular Beam Epitaxy  Mobility  
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Wang XG;  Chang Y;  Chu JH;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  Electron-mobility Transistor  Carrier Density  Quantum-wells  Band-gap  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 127-131
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Mobility