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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4, 页码: 044507
Authors:  Luan, CB;  Lin, ZJ;  Lv, YJ;  Zhao, JT;  Wang, YT;  Chen, H;  Wang, ZG
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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74512
Authors:  Lv YJ;  Lin ZJ;  Corrigan TD;  Zhao JZ;  Cao ZF;  Meng LG;  Luan CB;  Wang ZG;  Chen H;  Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
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Field-effect Transistors  Gan  Dependence  Contacts  States  Ni