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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
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Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Authors:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie;  Cao, Zhifang;  Yu, Yingxia;  Wang, Zhanguo
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偏振不灵敏半导体光放大器的制作方法 专利
专利类型: 发明, 申请日期: 2005-05-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王书荣;  王圩;  刘志宏;  张瑞英;  朱洪亮;  王鲁蜂
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Pt/n-GaN肖特基接触的退火行为 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 3, 页码: 279-283
Authors:  张泽洪;  孙元平;  赵德刚;  段俐宏;  王俊;  沈晓明;  冯淦;  冯志宏;  杨辉
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立方相GaN的持续光电导 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 1, 页码: 34-38
Authors:  张泽洪;  赵德刚;  孙元平;  冯志宏;  沈晓明;  张宝顺;  冯淦;  郑新和;  杨辉
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立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 161-164
Authors:  冯志宏;  杨辉;  徐大鹏;  赵德刚;  王海;  段俐宏
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Growth of Cubic GaN by MOCVD at High Temperature 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 120-123
Authors:  Fu Yi;  Sun Yuanping;  Shen Xiaoming;  Li Shunfeng;  Feng Zhihong;  Duan Lihong;  Wang Hai;  Yang Hui
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立方相GaN外延层中堆垛层错的非对称性 期刊论文
广西大学学报. 自然科学版, 2002, 卷号: 27, 期号: 3, 页码: 252-255
Authors:  沈晓明;  渠波;  冯志宏;  杨辉
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用侧向外延生长法降低立方相GaN中的层错密度 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 10, 页码: 1093-1097
Authors:  沈晓明;  付羿;  冯淦;  张宝顺;  冯志宏;  杨辉
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