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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4, 页码: 044507
Authors:  Luan, CB;  Lin, ZJ;  Lv, YJ;  Zhao, JT;  Wang, YT;  Chen, H;  Wang, ZG
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High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 4, 页码: Art. No. 043516
Authors:  Sun, Q;  Wang, JT;  Wang, H;  Jin, RQ;  Jiang, DS;  Zhu, JJ;  Zhao, DG;  Yang, H;  Zhou, SQ;  Wu, MF;  Smeets, D;  Vantomme, A;  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sunqian519@gmail.com
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Stress  Si(111)  Reduction  Thickness  
AlGaN/GaN异质结紫外探测器 期刊论文
红外与激光工程, 2007, 卷号: 36, 期号: 6, 页码: 917-919
Authors:  陈俊;  许金通;  李雪;  陈亮;  赵德刚;  李向阳
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抗辐射128kb PDSOI静态随机存储器 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 7, 页码: 1139-1143
Authors:  赵凯;  刘忠立;  于芳;  高见头;  肖志强;  洪根深
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非故意掺杂n型GaN的负持续光电导现象 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 6, 页码: 878-882
Authors:  苏志国;  许金通;  陈俊;  李向阳;  刘骥;  赵德刚
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Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 会议论文
Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials, Hangzhou, PEOPLES R CHINA, OCT 16-18, 2006
Authors:  Liang S;  Zhu HL;  Zhou JT;  Cheng YB;  Pan JQ;  Zhao LJ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Chemical-vapor-deposition  
高量子效率前照式GaN基p-i-n结构紫外探测器 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 5, 页码: 896-899
Authors:  游达;  汤英文;  赵德刚;  许金通;  徐运华;  龚海梅
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空间用紫外探测及AlGaN探测器的研究进展 期刊论文
激光与红外, 2006, 卷号: 36, 期号: 11, 页码: 1009-1012
Authors:  张燕;  龚海梅;  白云;  陈亮;  许金通;  汤英文;  游达;  赵德刚;  郭丽伟;  李向阳
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GaN基紫外探测器及其研究进展 期刊论文
红外与激光工程, 2006, 卷号: 35, 期号: 3, 页码: 276-280
Authors:  李向阳;  许金通;  汤英文;  李雪;  张燕;  龚海梅;  赵德刚;  杨辉
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基于单个和级联电吸收调制器超短光脉冲的产生 期刊论文
光子学报, 2004, 卷号: 33, 期号: 1, 页码: 53-56
Authors:  王安斌;  伍剑;  张帆;  林金桐;  赵玲娟;  王圩
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