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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4, 页码: 044507
Authors:  Luan, CB;  Lin, ZJ;  Lv, YJ;  Zhao, JT;  Wang, YT;  Chen, H;  Wang, ZG
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:  Cao, ZF;  Lin, ZJ;  Lu, YJ;  Luan, CB;  Yu, YX;  Chen, H;  Wang, ZG
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Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Lv YJ (Lv, Yuanjie);  Meng LG (Meng, Lingguo);  Yu YX (Yu, Yingxia);  Cao ZF (Cao, Zhifang);  Chen H (Chen, Hong);  Wang ZG (Wang, Zhanguo)
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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 12, 页码: 123504
Authors:  Lv YJ;  Lin ZJ;  Meng LG;  Yu YX;  Luan CB;  Cao ZF;  Chen H;  Sun BQ;  Wang ZG;  Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn
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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74512
Authors:  Lv YJ;  Lin ZJ;  Corrigan TD;  Zhao JZ;  Cao ZF;  Meng LG;  Luan CB;  Wang ZG;  Chen H;  Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
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Field-effect Transistors  Gan  Dependence  Contacts  States  Ni  
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 12, 页码: Article no.123512
Authors:  Lv YJ;  Lin ZJ;  Zhang Y;  Meng LG;  Luan CB;  Cao ZF;  Chen H;  Wang ZG;  Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
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2-dimensional Electron-gas  Interfacial Layer  Mobility  
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 4, 页码: Article no.47105
Authors:  Lu YJ;  Lin ZJ;  Zhang Y;  Meng LG;  Cao ZF;  Luan CB;  Chen H;  Wang ZG;  Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
Adobe PDF(338Kb)  |  Favorite  |  View/Download:1190/387  |  Submit date:2011/07/05
Algan/gan Heterostructures  Thermal Stressing  Polarization  Self-consistently Solving Schrodinger's And Poisson's Equations  Field-effect Transistors  Polarization  Stability  Charge  Gan