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All-optical clock recovery for 40 Gbaud NRZ-QPSK signals using amplified feedback DFB laser diode 期刊论文
CHINESE OPTICS LETTERS, 2014, 卷号: 12, 期号: 8, 页码: 081402
Authors:  Yu, LQ;  Li, Y;  Zang, JZ;  Lu, D;  Pan, BW;  Zhao, LJ
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Enhanced light emission from Ge quantum dots in photonic crystal ring resonator 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 10, 页码: 12248-12254
Authors:  Zhang, Y;  Zeng, C;  Li, DP;  Zhao, XJ;  Gao, G;  Yu, JZ;  Xia, JS
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The thermal stability study and improvement of 4H-SiC ohmic contact 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: 122106
Authors:  Liu, SB;  He, Z;  Zheng, L;  Liu, B;  Zhang, F;  Dong, L;  Tian, LX;  Shen, ZW;  Wang, JZ;  Huang, YJ;  Fan, ZC;  Liu, XF;  Yan, GG;  Zhao, WS;  Wang, L;  Sun, GS;  Yang, FH;  Zeng, YP
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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74512
Authors:  Lv YJ;  Lin ZJ;  Corrigan TD;  Zhao JZ;  Cao ZF;  Meng LG;  Luan CB;  Wang ZG;  Chen H;  Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
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Field-effect Transistors  Gan  Dependence  Contacts  States  Ni  
Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 057305
Authors:  Peng YC (Peng Ying-Cai);  Fan ZD (Fan Zhi-Dong);  Bai ZH (Bai Zhen-Hua);  Zhao XW (Zhao Xin-Wei);  Lou JZ (Lou Jian-Zhong);  Cheng X (Cheng Xu);  Peng, YC, Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China.电子邮箱地址: ycpeng2002@163.com
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Porous Silicon  Mechanism  Emission  
Ferromagnetic modification of GaN film by Cu+ ions implantation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 卷号: 268, 期号: 2, 页码: 123-126
Authors:  Zhang B;  Chen CC;  Yang C;  Wang JZ;  Shi LQ;  Cheng HS;  Zhao DG;  Zhang, B, Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China. E-mail Address: binzhang@fudan.edu.cn
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Nonmagnetic Element Doped Semiconductor  Cu Ion implantatIon  Gan-based Dms  Pixe Analysis  Doped Zno  Mn  Cr  
Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy 期刊论文
PHYSICA B-CONDENSED MATTER, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435
Authors:  Zhao CW (Zhao C. W.);  Xing YM (Xing Y. M.);  Yu JZ (Yu J. Z.);  Han GQ (Han G. Q.)
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Si/ge Heterostructures  Strain  High-resolution Transmission Electron  Microscopy  
Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 9, 页码: 3980-3984
Authors:  Zhao JZ;  Lin ZJ;  Corrigan TD;  Zhang Y;  Lu YJ;  Lu W;  Wang ZG;  Chen H;  Zhao JZ Shandong Univ Sch Phys Jinan 250100 Peoples R China. E-mail Address: linzj@sdu.edu.cn
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Relative Permittivity  Algan Barrier Layer  Algan/gan Heterostructures  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
Authors:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Pockels Effect  
The influence of Schottky contact metals on the strain of AlGaN barrier layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 4, 页码: Art. No. 044503
Authors:  Lin, ZJ;  Zhao, JZ;  Corrigan, TD;  Wang, Z;  You, ZD;  Wang, ZG;  Lu, W;  Lin, ZJ, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn
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Piezoelectric Polarization  Heterostructures