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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74512
Authors:  Lv YJ;  Lin ZJ;  Corrigan TD;  Zhao JZ;  Cao ZF;  Meng LG;  Luan CB;  Wang ZG;  Chen H;  Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
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Field-effect Transistors  Gan  Dependence  Contacts  States  Ni  
Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 9, 页码: 3980-3984
Authors:  Zhao JZ;  Lin ZJ;  Corrigan TD;  Zhang Y;  Lu YJ;  Lu W;  Wang ZG;  Chen H;  Zhao JZ Shandong Univ Sch Phys Jinan 250100 Peoples R China. E-mail Address: linzj@sdu.edu.cn
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Relative Permittivity  Algan Barrier Layer  Algan/gan Heterostructures  
The influence of Schottky contact metals on the strain of AlGaN barrier layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 4, 页码: Art. No. 044503
Authors:  Lin, ZJ;  Zhao, JZ;  Corrigan, TD;  Wang, Z;  You, ZD;  Wang, ZG;  Lu, W;  Lin, ZJ, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn
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Piezoelectric Polarization  Heterostructures  
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 17, 页码: Art.No.173507
Authors:  Zhao J (Zhao, Jianzhi);  Lin Z (Lin, Zhaojun);  Corrigan TD (Corrigan, Timothy D.);  Wang Z (Wang, Zhen);  You Z (You, Zhidong);  Wang Z (Wang, Zhanguo);  Zhao, J, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn
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Field-effect Transistors