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Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Wang XG;  Chang Y;  Chu JH;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  Electron-mobility Transistor  Carrier Density  Quantum-wells  Band-gap  
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Authors:  Gao F;  Huang DD;  Li JP;  Kong MY;  Sun DZ;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconducting Gegermanium  Semiconducting Silicon  Bipolar Transistors  Heterojunction Semiconductor Devices  Power  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Authors:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(187Kb)  |  Favorite  |  View/Download:890/264  |  Submit date:2010/08/12
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 210-213
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:858/235  |  Submit date:2010/08/12
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 127-131
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Mobility  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
Authors:  Gao F;  Huang CJ;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(156Kb)  |  Favorite  |  View/Download:1255/305  |  Submit date:2010/08/12
Atomic Force Microscopy  Etching  Nanostructures  Molecular Beam Epitaxy  Semiconducting Germanium  Semiconducting Silicon  Quantum Dots  Inas  Growth  Strain  
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Authors:  Liu JP;  Huang DD;  Li JP;  Lin YX;  Sun DZ;  Kong MY;  Huang DD,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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N-type Doping  P-type Doping  Si/sige  Hbt  Gsmbe  Si  
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(107Kb)  |  Favorite  |  View/Download:1093/308  |  Submit date:2010/08/12
Gsmbe  Sige Alloy  Doping  Sims  Hbt  Current Gain  Si  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Sun DZ;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(113Kb)  |  Favorite  |  View/Download:880/267  |  Submit date:2010/08/12
Si Growth Rate  p Doping  Ph3 Flow Rate  p Segregation  Gsmbe  Chemical-vapor-deposition  Si1-xgex  Phosphorus  Si2h6  Disilane  Si(100)  Mbe  
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
Authors:  Liu JP;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Liu JP,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(336Kb)  |  Favorite  |  View/Download:675/244  |  Submit date:2010/08/12
Si Low-temperature Epitaxy  p Doping  Surface Morphology  Morphological Evolution  Deposition