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InAs单晶衬底的表面形貌和化学成分分析 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 4, 页码: 878-882
Authors:  胡炜杰;  赵有文;  段满龙;  王应利;  王俊
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Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文
JOURNAL OF RARE EARTHS, 2006, 卷号: 24, 期号: Sp.Iss.SI, 页码: 75-77
Authors:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Yang ZX;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Indium Phosphide  Defect  Semi-insualting  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Semi-insulating Inp  Deep-level Defects  Fe  
Growth of ZnO single crystal by chemical vapor transport method 期刊论文
JOURNAL OF RARE EARTHS, 2006, 卷号: 24, 期号: Sp.Iss.SI, 页码: 40275
Authors:  Zhou JM;  Dong ZY;  Wei XC;  Duan ML;  Li JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Zinc Oxide  Chemical Vapor Transport  Single Crystal Growth  Hydrothermal Method  Bulk Zno  Impurities  Devices  
化学气相传输法生长ZnO单晶 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 2, 页码: 336-339
Authors:  赵有文;  董志远;  魏学成;  段满龙;  李晋闽
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半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 524-529
Authors:  赵有文;  董志远;  李成基;  段满龙;  孙文荣
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化学气相传输法生长ZnO单晶及性质研究 期刊论文
人工晶体学报, 2006, 卷号: 35, 期号: 2, 页码: 404-408
Authors:  赵有文;  董志远;  魏学成;  段满龙;  李晋闽
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高质量InAs单晶材料的制备及其性质 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 8, 页码: 1391-1395
Authors:  赵有文;  孙文荣;  段满龙;  董志远;  杨子祥;  吕旭如;  王应利
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磷化铟单晶衬底的缺陷控制和高质量表面制备 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 12, 页码: 2127-2133
Authors:  赵有文;  董志远;  孙文荣;  段满龙;  杨子祥;  吕旭如
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升华法生长AlN体单晶初探 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 7, 页码: 1241-1245
Authors:  赵有文;  董志远;  魏学成;  段满龙;  李晋闽
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Annealing ambient controlled deep defect formation in InP 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169
Authors:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Zeng, YP;  Sun, NF;  Sun, TN;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
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Fe-doped Inp