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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  X.G. He;  X.J. Li;  H. Yang;  Y.T. Zhang;  G.T. Du
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A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
Authors:  X. Li;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  M. Shi;  D.M. Zhao;  W. Liu;  J.J. Zhu;  S.M. Zhang;  H. Yang
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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
Authors:  P. Chen;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  J. Yang;  X. Li;  L. Q. Zhang;  J.P. Liu;  S.M. Zhang;  H. Yang
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