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无权访问的条目 期刊论文
作者:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(154Kb)  |  收藏  |  浏览/下载：975/381  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhao, YW (Zhao You-Wen);  Miao, SS (Miao Shan-Shan);  Dong, ZY (Dong Zhi-Yuan);  Lue, XH (Lue Xiao-Hong);  Deng, AH (Deng Ai-Hong);  Yang, J (Yang Jun);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：884/248  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  赵有文;  苗杉杉;  董志远;  吕小红;  邓爱红;  杨俊;  王博
Adobe PDF(393Kb)  |  收藏  |  浏览/下载：875/252  |  提交时间：2010/11/23
无权访问的条目 期刊论文
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Yang ZX;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
Adobe PDF(116Kb)  |  收藏  |  浏览/下载：1141/255  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Li Z (Li Z.);  Li CJ (Li C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. E-mail: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：869/264  |  提交时间：2010/04/11
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)  |  收藏  |  浏览/下载：1498/450  |  提交时间：2010/03/29
Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1290/373  |  提交时间：2010/03/29
Dlts  
无权访问的条目 期刊论文
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Miao, SS (Miao, Shanshan);  Deng, AH (Deng, Aihong);  Yang, J (Yang, Jun);  Wang, B (Wang, Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(180Kb)  |  收藏  |  浏览/下载：874/267  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  Song SF;  Chen WD;  Zhang CG;  Bian LF;  Hsu CC;  Lu LW;  Zhang YH;  Zhu JJ;  Song, SF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sfsong@red.semi.ac.cn
Adobe PDF(60Kb)  |  收藏  |  浏览/下载：1022/324  |  提交时间：2010/03/17
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)  |  收藏  |  浏览/下载：1531/383  |  提交时间：2010/03/29
Encapsulated Czochralski Inp  Semiconductor Compound-crystals  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Deep-level Defects  Annealing Ambient  Point-defects  Fe  Phosphide  Donors