Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
	Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian); Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2006
会议名称	12th International Conference on Indium Phosphide and Related Materials
会议录名称	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
页码	139-143
会议日期	MAY 07-11, 2006
会议地点	Princeton, NJ
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-0-7803-9557-2
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented.
关键词	Stimulated Current Spectroscopy Current Transient Spectroscopy Fe-doped Inp Point-defects Compensation Temperature Donors Traps
学科领域	半导体材料
主办者	IEEE. Princeton Univ
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9784
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, YW ,Dong, ZY ,Dong, HW ,et al. Recent research results on deep level defects in semi-insulating InP - Application to improve material quality[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:139-143.

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