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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 600
Authors:  Zhang HY (Zhang, Hongyi);  Chen YH (Chen, Yonghai);  Zhou GY (Zhou, Guanyu);  Tang CG (Tang, Chenguang);  Wang ZG (Wang, Zhanguo)
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Observation of the surface circular photogalvanic effect in InN films 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Li M;  Fu DY;  Fang HN;  Xiu XQ;  Lu H;  Zheng YD;  Chen YH;  Tang CG;  Wang ZG;  Zhang R Nanjing Univ Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Surface Charge Accumulation Layer  Spin-dependent Current  Spin Splitting  
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Xiu XQ;  Li Y;  Fu DY;  Lu H;  Chen P;  Han P;  Zheng YD;  Tang CG;  Chen YH;  Wang ZG;  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Zhang Z Nanjing Univ Jiangsu Prov Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Dislocation  Carrier Origination  Localization  
厚度对MOCVD生长InN薄膜位错特性与光电性质的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  张曾;  张荣;  谢自力;  刘斌;  修向前;  李弋;  傅德颐;  陆海;  陈鹏;  韩平;  郑有炓;  汤晨光;  陈涌海;  王占国
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Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures at room temperature 期刊论文
PHYSICAL REVIEW LETTERS, 2008, 卷号: 101, 期号: 14, 页码: Art. No. 147402
Authors:  He, XW;  Shen, B;  Chen, YH;  Zhang, Q;  Han, K;  Yin, CM;  Tang, N;  Xu, FJ;  Tang, CG;  Yang, ZJ;  Qin, ZX;  Zhang, GY;  Wang, ZG;  He, XW, Peking Univ, State Key Lab Artificial Microstruct & Mesosco Ph, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: bshen@pku.edu.cn;  yhchen@red.semi.ac.cn
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Quantum-wells  Spin  Semiconductors  
Circular photogalvanic effect at inter-band excitation in InN 期刊论文
SOLID STATE COMMUNICATIONS, 2008, 卷号: 145, 期号: 4, 页码: 159-162
Authors:  Zhang, Z;  Zhang, R;  Liu, B;  Xie, ZL;  Xiu, XQ;  Han, R;  Lu, H;  Zheng, YD;  Chen, YH;  Tang, CG;  Wang, ZG;  Zhang, R, Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Inn  Photogalvanic  Inter-band Transition  
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
Authors:  Tang, CG;  Chen, YH;  Liu, Y;  Zhang, RQ;  Liu, XL;  Wang, ZG;  Zhang, R;  Zhang, Z;  Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum-wells  Spin  
The growth temperatures dependence of optical and electrical properties of InN films 期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Authors:  Liu, B;  Zhang, R;  Xie, ZL;  Xiu, XQ;  Li, L;  Kong, JY;  Yu, HQ;  Han, P;  Gu, SL;  Shi, Y;  Zheng, YD;  Tang, CG;  Chen, YH;  Wang, ZG;  Zhang, R, Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Metalorganic Chemical Vapor Deposition  X-ray Diffraction  Photoluminescence