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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：1528/329  |  提交时间：2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Sun, J;  Hu, LZ;  Sun, YC;  Wang, ZY;  Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
Adobe PDF(468Kb)  |  收藏  |  浏览/下载：1279/242  |  提交时间：2010/03/29
Growth  
High performance resonant tunneling diode on a new material structure 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang JL;  Liu ZL;  Wang LC;  Zeng YP;  Yang FH;  Bai YX;  Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)  |  收藏  |  浏览/下载：1243/245  |  提交时间：2010/03/29
Resonant Tunneling Diode  
Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation 会议论文
SMIC-XIII 2004 13TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, La Jolla, CA 92037 USA.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1167/231  |  提交时间：2010/03/29
Defects in GaSb studied by coincidence Doppler broadening measurements 会议论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6, Kyoto, JAPAN, SEP 07-12, 2003
作者:  Hu WG;  Wang Z;  Dai YQ;  Wang SJ;  Zhao YW;  Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
Adobe PDF(210Kb)  |  收藏  |  浏览/下载：1352/262  |  提交时间：2010/10/29
Coincidence Doppler Broadening  Defects  Gasb  Positron Annihilation  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1528/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain