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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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专题:中国科学院半导体研究所(2009年前)
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Self-assembled GaAs quantum rings by MBE droplet epitaxy
会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:
Huang, SS (Huang, Shesong)
;
Niu, ZC (Niu, Zhichuan)
;
Xia, JB (Xia, Jianbai)
;
Huang, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1013Kb)
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浏览/下载:1320/216
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提交时间:2010/03/29
Quantum Single Rings
Concentric Quantum Double Rings
Coupled Concentric Quantum Double Ring
Droplet Epitaxy
Fabrication and characterization of two-dimensional photonic crystal on silicon by efficient methods
会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:
Xu XS (Xu Xingsheng)
;
Wang CX (Wang Chunxia)
;
Li F (Li Fang)
;
Xiong GG (Xiong Guiguang)
;
Liu YL (Liu Yuliang)
;
Chen HD (Chen Hongda)
;
Xu, XS, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(310Kb)
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浏览/下载:1480/292
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提交时间:2010/03/29
Wave-guide
Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm
会议论文
2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Zhuhai, PEOPLES R CHINA, JAN 18-21, 2006
作者:
Gong, C (Gong, Chuniuan)
;
Ho, XW (Ho, Xiongwei)
;
Gong, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(3860Kb)
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浏览/下载:1305/145
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提交时间:2010/03/29
Band-gaps
Genetic Algorithms
Photonic Crystals
Growth of ZnO single crystal by chemical vapor transport method
会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:
Zhou, JM
;
Dong, ZY
;
Wei, XC
;
Duan, ML
;
Li, JM
;
Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(268Kb)
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浏览/下载:1804/561
  |  
提交时间:2010/03/29
Zinc Oxide
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
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浏览/下载:1576/383
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提交时间:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
;
Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)
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  |  
浏览/下载:1750/427
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Ion-scattering Spectroscopy
Lattice Polarity
Single-crystals
Films
Polarization
Gan(0001)
Surfaces
Growth
Diodes
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
;
Zhang ZC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(389Kb)
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浏览/下载:1344/254
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提交时间:2010/11/15
Czochralski Method
Growth From Melt
Semiconductor Silicon
Argon Gas Flow
Computer Simulation
Oxygen Content
Furnace Pressure
Space-grown SI-GaAs and its application
会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)
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  |  
浏览/下载:1823/365
  |  
提交时间:2010/10/29
Semiinsulating Gallium-arsenide
Floating-zone Growth
Crystal-growth
Zero Gravity
Microgravity
Segregation
Stoichiometry
Silicon
Defects
Insb
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)
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浏览/下载:1188/221
  |  
提交时间:2010/11/15
Crystal Morphology
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Gallium Arsenide
Semiconducting Indium Gallium Arsenide
1.35 Mu-m
Gaas-surfaces
Photoluminescence
Islands
Residual donors in undoped LEC InP
会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:
Zhao YW
;
Sun NF
;
Sun TN
;
Lin LY
;
Wu XW
;
Guo WL
;
Wu X
;
Bi KY
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(231Kb)
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  |  
浏览/下载:1415/331
  |  
提交时间:2010/10/29
Indium-phosphide
Carbon
Defects
Growth