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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604
Authors:  Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
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Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy 期刊论文
Nanotechnology, 2019, 卷号: 31, 期号: 15, 页码: 1-10
Authors:  Lianjun Wen;  Dong Pan;  Dunyuan Liao;  Jianhua Zhao
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Self-catalyzed growth of GaSb nanowires for high performance ultraviolet-visible-near infrared photodetectors 期刊论文
Science China Materials, 2019, 页码: 1-9
Authors:  Kai Zhang;  Ruiqing Chai;  Ruilong Shi;  Zheng Lou;  Guozhen Shen
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Morphology control of c-Si via facile copper-assisted chemical etching: Managements on etch end-points 期刊论文
Applied Surface Science, 2019, 卷号: 489, 页码: 776-785
Authors:  Shuai Zhao;   Guodong Yuan ;   Qi Wang;   Wenqiang Liu;   Shuo Zhang;   Zhiqiang Liu;   Junxi Wang;   Jinmin Li
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Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280
Authors:  Shuangtao Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Feng Liang;  Ping Chen;  Zongshun Liu;  Yao Xing;  Liyuan Peng
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Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale 期刊论文
Nano Letters, 2019, 卷号: 19, 期号: 3, 页码: 1632−1642
Authors:  Dong Pan;   Ji-Yin Wang;   Wei Zhang;   Lujun Zhu;   Xiaojun Su;   Furong Fan;   Yuhao Fu;   Shaoyun Huang;   Dahai Wei;   Lijun Zhang;   Manling Sui;   Arkady Yartsev;   Hongqi Xu;   Jianhua Zhao
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III-V族半导体纳米线及其异质结的可控生长和性能表征 学位论文
, 北京: 中国科学院大学, 2018
Authors:  季祥海
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Iii-v族半导体纳米线  异质结纳米线  自催化生长机制  金属有机化学气相沉积  
无权访问的条目 学位论文
Authors:  伍绍腾
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通讯波段量子点单光子源及新型缺陷单光子源研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  薛永洲
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基于III-V半导体纳米线光电探测器件的研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  张凯
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Iii-v族半导体  纳米线  光电探测器  表面钝化  柔性器件