中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共14条，第1-10条 帮助

限定条件                        
已选(0)清除 条数/页：   排序方式：
High-quality GaN grown by gas-source MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(103Kb)  |  收藏  |  浏览/下载：1749/464  |  提交时间：2010/11/15
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  Molecular-beam Epitaxy  Heterostructures  Sapphire  Diodes  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1445/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(193Kb)  |  收藏  |  浏览/下载：1203/243  |  提交时间：2010/11/15
Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1310/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1300/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
无权访问的条目 期刊论文
作者:  Xu XL;  Liu HT;  Shi CS;  Zhao YW;  Fung S;  Beling CD;  Xu XL,Univ Sci & Technol China,Dept Phys,Hefei 230026,Anhui,Peoples R China.
Adobe PDF(62Kb)  |  收藏  |  浏览/下载：1215/326  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL,Ohio State Univ,Dept Elect Engn,Columbus,OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：894/216  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Xu HZ;  Takahashi K;  Wang CX;  Wang ZG;  Okada Y;  Kawabe M;  Harrison I;  Foxon CT;  Xu HZ,Univ Tsukuba,Inst Appl Phys,Tsukuba,Ibaraki 3058573,Japan.
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：1156/317  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Xu HZ;  Bell A;  Wang ZG;  Okada Y;  Kawabe M;  Harrison I;  Foxon CT;  Xu HZ,Univ Tsukuba,Inst Appl Phys,Tsukuba,Ibaraki 3058573,Japan.
Adobe PDF(169Kb)  |  收藏  |  浏览/下载：1433/492  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：918/256  |  提交时间：2010/08/12