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Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 054204
Authors:  Ji L (Ji Lian);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhang LQ (Zhang Li-Qun);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Duan LH (Duan Li-Hong);  Yang H (Yang Hui);  Ji, L, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jilian@red.semi.ac.cn;  smzhang@red.semi.ac.cn
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Diodes  
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain  
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
Authors:  Xu YQ;  Li LH;  Pan Z;  Lin YW;  Wang QM;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Molecular-beam Epitaxy  Mu-m  
1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
Authors:  Zhong P;  Lin YW;  Li LH;  Xu YQ;  Wei Z;  Wu RH;  Lin YW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Operation  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 17, 页码: 2488-2490
Authors:  Li LH;  Pan Z;  Xu YQ;  Du Y;  Lin YW;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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1.3 Mu-m  Optical-properties  Band-gap  Superlattices  Lasers  Gaas  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 527-531
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Authors:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(124Kb)  |  Favorite  |  View/Download:800/230  |  Submit date:2010/08/12
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range