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无权访问的条目 期刊论文
作者:  Zhou, SQ (Zhou, Shengqiang);  Wu, MF (Wu, M. F.);  Yao, SD (Yao, S. D.);  Liu, JP (Liu, J. P.);  Yang, H (Yang, H.);  Zhou, SQ, Peking Univ, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: s.zhou@fz-rossendorf.de
Adobe PDF(155Kb)  |  收藏  |  浏览/下载：894/372  |  提交时间：2010/03/29
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1476/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
无权访问的条目 期刊论文
作者:  Fang CB;  Wang XL;  Hu GX;  Wang JX;  Wang CM;  Li JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
Adobe PDF(221Kb)  |  收藏  |  浏览/下载：1303/256  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Zhou YF;  Pan ZL;  Liu Y;  Ai F;  Chen NF;  Huang YY;  He W;  Tang LA;  Wang JC;  Zhou, YF, Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China. E-mail: yfzhou@sunm.shcnc.ac.cn
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：912/221  |  提交时间：2010/04/11
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1599/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Fang, CB;  Wang, XL;  Hu, GX;  Wang, JX;  Wang, CM;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1454/359  |  提交时间：2010/03/29
Mocvd  
无权访问的条目 期刊论文
作者:  Lu SL;  Jiang DS;  Dai JM;  Yang CL;  He HT;  Ge WK;  Wang JN;  Chang K;  Zhang JY;  Shen DZ;  Wang, JN, Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Hong Kong, Peoples R China. E-mail: phjwang@ust.hk
Adobe PDF(81Kb)  |  收藏  |  浏览/下载：1209/320  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(68Kb)  |  收藏  |  浏览/下载：1500/646  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：982/313  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Wang Xiaoliang;  Hu Guoxin;  Ma Zhiyong;  Xiao Hongling;  Wang Cuimei;  Luo Weijun;  Liu Xinyu;  Chen Xiaojuan;  Li Jianping;  Li Jinmin;  Qian He;  Wang Zhanguo
Adobe PDF(559Kb)  |  收藏  |  浏览/下载：1409/387  |  提交时间：2010/11/23