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在锗衬底上生长无反相畴砷化镓薄膜的分子束外延方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  王鹏飞;  吴东海;  吴兵朋;  熊永华;  詹 峰;  黄社松;  倪海桥;  牛智川
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Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107803
Authors:  Ma SS (Ma Shan-Shan);  Wang, BR (Wang Bao-Rui);  Sun BQ (Sun Bao-Quan);  Wu DH (Wu Dong-Hai);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Ma, SS, Chinese Acad Sci, SKLSM, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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Molecular-beam Epitaxy  
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 卷号: 9, 期号: 2, 页码: 1333-1336
Authors:  Wu BP;  Wu DH;  Xiong YH;  Huang SS;  Ni HQ;  Xu YQ;  Niu ZC;  Wu BP Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Inas Quantum Dots  Metamorphic Buffer  Molecular Beam Epitaxy  
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 014214
Authors:  Wang HL;  Wu DH;  Wu BP;  Ni HQ;  Huang SS;  Xiong YH;  Wang PF;  Han Q;  Niu ZC;  Tangring I;  Wang SM;  Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com
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Threshold Current-density  
GaAs 基1.55 μm GaInNAs(Sb)、异变InGaAs 量子阱材料与激光器 学位论文
, 北京: 中国科学院半导体研究所, 2008
Authors:  吴东海
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砷化镓基1.5微米量子阱结构及其外延生长方法 专利
专利类型: 发明, 申请日期: 2007-04-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  倪海桥;  韩勤;  张石勇;  吴东海;  赵欢;  杨晓红;  彭红玲;  周志强;  熊永华;  吴荣汉
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Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546
Authors:  Wu, BP;  Wu, DH;  Ni, HQ;  Huang, SS;  Zhan, F;  Xiong, YH;  Xu, YQ;  Niu, ZC;  Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wudonghai@red.semi.ac.cn
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Layers  Surfactant  Substrate  Hemt  Sb  
1.58 mu m InGaAs quantum well laser on GaAs 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 22, 页码: Art. No. 221101
Authors:  Tangring, I;  Ni, HQ;  Wu, BP;  Wu, DH;  Xiong, YH;  Huang, SS;  Niu, ZC;  Wang, SM;  Lai, ZH;  Larsson, A;  Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se
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Dot Lasers  Growth  
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 301, 期号: 0, 页码: 125-128
Authors:  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Fang, ZD (Fang, Z. D.);  Huang, SS (Huang, S. S.);  Zhang, SY (Zhang, S. Y.);  Wu, DH (Wu, D. H.);  Shun, Z (Shun, Z.);  Han, Q (Han, Q.);  Wu, RH (Wu, R. H.);  Ni, HQ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: nihq@red.semi.ac.cn
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Quantum Wells  
1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
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