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A 5GHz low power WLAN transceiver SiGe RFIC for personal communication terminal applications 会议论文
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, JAN 10-12, 2007
作者:  Yan, J (Yan, Jun);  Xu, QM (Xu, Qiming);  Zhang, XL (Zhang, Xuelian);  Hu, XQ (Hu, Xueqing);  Xu, H (Xu, Hua);  Shi, Y (Shi, Yin);  Dai, FF (Dai, Fa Foster);  Yan, J, Chinese Acad Sci, Inst Semicond, SemiRF Lab, ISCAS, Beijing 100083, Peoples R China.
Adobe PDF(82Kb)  |  收藏  |  浏览/下载：1505/251  |  提交时间：2010/03/29
Personal Communication Terminal  Sige Rfic  Wlan 802.11a Transceiver  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1223/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1213/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
The effects of carbonized buffer layer on the growth of SiC on Si 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Wang YS;  Li JM;  Zhang FF;  Lin LY;  Wang YS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1033/244  |  提交时间：2010/11/15
Heteroepitaxial Growth  Hydrocarbon Radicals  Si(001) Surface  Beam