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用于雷达回波仿真的小型化微波光纤延迟线 期刊论文
光学精密仪器, 2017, 卷号: 25, 期号: 5, 页码: 1206-1212
Authors:  李冠鹏;  王辉;  张邦宏;  杨惠霞;  谢亮
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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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Mobility limited by cluster scattering in ternary alloy quantum wires 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017305
Authors:  Zhang, H;  Yang, SY;  Liu, GP;  Wang, JX;  Jin, DD;  Li, HJ;  Liu, XL;  Zhu, QS;  Wang, ZG
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One-way optical transmission in silicon grating-photonic crystal structures 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 16, 页码: 4934-4937
Authors:  Zhang, YY;  Kan, Q;  Wang, GP
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Anisotropic elastic scattering of stripe/line-shaped scatters to two-dimensional electron gas: Model and illustrations in a nonpolar AlGaN/GaN hetero-junction 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 9, 页码: 093705
Authors:  Zhang, JF;  Li, Y;  Yan, R;  Liu, GP;  Nie, YH;  Zhang, JC;  Hao, Y
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Effect of disorder with long-range correlation on transport in graphene nanoribbon 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 卷号: 24, 期号: 23, 页码: 235303
Authors:  Zhang, GP;  Gao, M;  Zhang, YY;  Liu, N;  Qin, ZJ;  Shangguan, MH
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Influence of zinc on electrical and microstructural properties of CaCu3Ti4O12 ceramics prepared by sol-gel process 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 522, 页码: 157-161
Authors:  Xu, D;  Zhang, C;  Lin, YH;  Jiao, L;  Yuan, HM;  Zhao, GP;  Cheng, XN
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A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
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High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
Authors:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
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Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
CZNTD Si中氧碳对缺陷-杂质复合体行为的影响 期刊论文
半导体学报, 1992, 卷号: 13, 期号: 7, 页码: 438
Authors:  张一心;  李朝勇;  李光平;  何秀坤;  卢存刚;  李祖华
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