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GaN high electron mobility transistors with AlInN back barriers
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
2016
Source PublicationJournal of Alloys and Compounds
Volume662Pages:16-19
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27864
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
X.G. He,D.G. Zhao,D.S. Jiang,et al. GaN high electron mobility transistors with AlInN back barriers[J]. Journal of Alloys and Compounds,2016,662:16-19.
APA X.G. He.,D.G. Zhao.,D.S. Jiang.,J.J. Zhu.,P. Chen.,...&H. Yang.(2016).GaN high electron mobility transistors with AlInN back barriers.Journal of Alloys and Compounds,662,16-19.
MLA X.G. He,et al."GaN high electron mobility transistors with AlInN back barriers".Journal of Alloys and Compounds 662(2016):16-19.
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