SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
在半导体衬底上制备有序砷化铟量子点的方法
周慧英; 曲胜春; 金鹏; 徐波; 王赤云; 刘俊朋; 王智杰; 王占国
2008-08-13
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-02-07
Language中文
Application NumberCN200710063705.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4181
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周慧英,曲胜春,金鹏,等. 在半导体衬底上制备有序砷化铟量子点的方法[P]. 2008-08-13.
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