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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Electron delocalization in gate-tunable gapless silicene 期刊论文
Phys. Rev. B, 2013, 卷号: 88, 页码: 125431
Authors:  Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li
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Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Authors:  Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113105
Authors:  Chen P (Chen, P.);  Feng MX (Feng, M. X.);  Jiang DS (Jiang, D. S.);  Zhao DG (Zhao, D. G.);  Liu ZS (Liu, Z. S.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Le LC (Le, L. C.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
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Low temperature characteristics of AlGaN/GaN high electron mobility transistors 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 56, 期号: 1, 页码: 10101
Authors:  Lin DF (Lin D. F.);  Wang XL (Wang X. L.);  Xiao HL (Xiao H. L.);  Wang CM (Wang C. M.);  Qiang LJ (Qiang L. J.);  Feng C (Feng C.);  Chen H (Chen H.);  Hou QF (Hou Q. F.);  Deng QW (Deng Q. W.);  Bi Y (Bi Y.);  Kang H (Kang H.)
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GaAs /AlGaAs多量子阱空间光调制器入射角度特性研究 期刊论文
光电子·激光, 2010, 卷号: 21, 期号: 5, 页码: 668-671
Authors:  黄寓洋;  刘惠春;  Wasileweski Z R;  Buchanan M;  Laframboise S R;  杨晨;  崔国新;  边历峰;  杨辉;  张耀辉
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GaN基气体传感器制备及性质研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  冯春
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一种对气体传感器或半导体器件性能进行测试的系统 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  王新华;  冯春;  王保柱;  马志勇;  王军喜;  胡国新;  肖红领;  冉军学;  王翠梅
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用于共振腔光电探测器的Si基Bragg反射器 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 5, 页码: 483
Authors:  李成;  杨沁清;  朱家廉;  王红杰;  成步文;  余金中;  王启明;  王鲁峰;  彭晔
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