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Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文
Electronics, 2019, 卷号: 8, 页码: 241
Authors:  Huolin Huang ;   Feiyu Li ;   Zhonghao Sun ;   Nan Sun ;   Feng Zhang ;   Yaqing Cao ;  Hui Zhang Pengcheng Tao
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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
Adobe PDF(3034Kb)  |  Favorite  |  View/Download:110/1  |  Submit date:2019/11/15
无权访问的条目 期刊论文
Authors:  Feng Zhang;  Guosheng Sun;  Huolin Huang;  Zhengyun Wu;  Lei Wang;  Wanshun Zhao;  Xingfang Liu;  Guoguo Yan;  Liu Zheng;  Lin Dong;  Yiping Zeng
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High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang F (Zhang Feng);  Sun GS (Sun Guosheng);  Huang HL (Huang Huolin);  Wu ZY (Wu Zhengyun);  Wang L (Wang Lei);  Zhao WS (Zhao Wanshun);  Liu XF (Liu Xingfang);  Yan GG (Yan Guoguo);  Zheng L (Zheng Liu);  Dong L (Dong Lin);  Zeng YP (Zeng Yiping)
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High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文
IEEE Electron Device Letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Zeng, Yiping;  Zhang, F.(
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Integrated Circuits  Metal Insulator Boundaries  Photodetectors  Semiconducting Silicon Compounds  Semiconductor Insulator Boundaries  Silicon Carbide