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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
Chen P (Chen, P.); Feng MX (Feng, M. X.); Jiang DS (Jiang, D. S.); Zhao DG (Zhao, D. G.); Liu ZS (Liu, Z. S.); Li L (Li, L.); Wu LL (Wu, L. L.); Le LC (Le, L. C.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume112Issue:11Pages:113105
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23764
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Chen P ,Feng MX ,Jiang DS ,et al. Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):113105.
APA Chen P .,Feng MX .,Jiang DS .,Zhao DG .,Liu ZS .,...&Yang H .(2012).Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer.JOURNAL OF APPLIED PHYSICS,112(11),113105.
MLA Chen P ,et al."Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer".JOURNAL OF APPLIED PHYSICS 112.11(2012):113105.
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