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Spin dependence of electron effective masses in InGaAs/InAlAs quantum well 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 6, 页码: 63707
Authors:  Wei LM;  Gao KH;  Liu XZ;  Zhou WZ;  Cui LJ;  Zeng YP;  Yu G;  Yang R;  Lin T;  Shang LY;  Guo SL;  Dai N;  Chu JH;  Austing DG;  Yu, G (reprint author), Shanghai Inst Tech Phys, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China,
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2-dimensional Electrons  Band Nonparabolicity  Field  Heterostructures  Subband  Gas  Magnetotransport  
In0.53Ga0.47As/In0.52Al0.48As量子阱二维电子气的零场自旋分裂 期刊论文
广西大学学报. 自然科学版, 2010, 卷号: 35, 期号: 6, 页码: 1027-1031
Authors:  周文政;  代娴;  林铁;  商丽燕;  崔利杰;  曾一平;  褚君浩
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Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 8, 页码: Art. No. 083121
Authors:  Liu, HY;  Meng, ZM;  Dai, QF;  Wu, LJ;  Guo, Q;  Hu, W;  Liu, SH;  Lan, S;  Yang, T;  Lan, S, S China Normal Univ, Sch Informat & Optoelect Sci & Technol, Lab Photon Informat Technol, Guangzhou 510006, Guangdong, Peoples R China. 电子邮箱地址:
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Energy Relaxation  Electron Relaxation  Capture  Phonon  Inas  Gaas  Temperature  Dependence  Density  Time  
A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application 会议论文
Authors:  Jia HL;  Ren T;  Lin M;  Chen FX;  Shi Y;  Dai FF;  Jia, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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制备网状纳米阵列铁磁性薄膜的物理气相沉积方法 专利
专利类型: 发明, 申请日期: 2007-12-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:  戴瑞烜;  陈诺夫;  彭长涛;  王鹏
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不同折射率膜层的制备方法 专利
专利类型: 发明, 申请日期: 2007-03-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  谭满清;  周代兵
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Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well 期刊论文
SOLID STATE COMMUNICATIONS, 2007, 卷号: 142, 期号: 7, 页码: 393-397
Authors:  Zhou WZ;  Huang ZM;  Qiu ZJ;  Lin T;  Shang LY;  Li DL;  Gao HL;  Cui LJ;  Zeng YP;  Guo SL;  Gui YS;  Dai N;  Chu JH;  Chu, JH, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址:
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Quantum Wells  
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文
SOLID STATE COMMUNICATIONS, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303
Authors:  Zhou, WZ (Zhou, W. Z.);  Lin, T (Lin, T.);  Shang, LY (Shang, L. Y.);  Yu, G (Yu, G.);  Huang, ZM (Huang, Z. M.);  Guo, SL (Guo, S. L.);  Gui, YS (Gui, Y. S.);  Dai, N (Dai, N.);  Chu, JH (Chu, J. H.);  Cui, LJ (Cui, L. J.);  Li, DL (Li, D. L.);  Gao, HL (Gao, H. L.);  Zeng, YP (Zeng, Y. P.);  Chu, JH, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址:
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Quantum Well  
色散效应对GaAs太阳电池双层减反射膜的影响 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 4, 页码: 725-729
Authors:  白一鸣;  陈诺夫;  戴瑞炬;  王鹏;  彭长涛
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Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 7, 页码: Art.No.071908
Authors:  Zhang JC;  Jiang DS;  Sun Q;  Wang JF;  Wang YT;  Liu JP;  Chen J;  Jin RQ;  Zhu JJ;  Yang H;  Dai T;  Jia QJ;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址:
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