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无权访问的条目 期刊论文
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Li H;  Zhou K;  Pang JB;  Shao YD;  Wang Z;  Zhao YW;  Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn
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无权访问的条目 期刊论文
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Qiu YX (Qiu Y. X.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Li ZW;  Xu XQ;  Wang J;  Liu JM;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Li, ZW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. lizhiwei@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Wei TB;  Hu Q;  Duan RF;  Wang JX;  Zeng YP;  Li JM;  Yang Y;  Liu YL;  Wei TB Chinese Acad Sci Semicond Lighting Technol Res & Dev Ctr Inst Semicond Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Wei TB;  Duan RF;  Wang JX;  Li JM;  Huo ZQ;  Zeng YP;  Wei TB Chinese Acad Sci Inst Semicond Res & Dev Ctr Semicond Lighting Technol Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Feng ZH;  Yang H;  Zhang SM;  Duan LH;  Wang H;  Wang YT;  Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Kang JY;  Huang QS;  Wang ZG;  Kang JY,Xiamen Univ,Dept Phys,Xiamen 361005,Peoples R China.
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Influence of precipitates on GaN epilayer quality 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Kang JY;  Huang QS;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
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Precipitate  Gan  Wds  Tem  Cathodoluminescence  Vapor-phase Epitaxy  Films  Mechanism  Growth