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Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
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Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
PHYSICS LETTERS A, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
Authors:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn
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First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Lin DF;  Jiang LJ;  Feng C;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Light-emitting-diodes  Vapor-phase Epitaxy  Band-gap  Mg  Photoluminescence  Ingan  Dependence  Strain  Energy  Inn  
An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 2, 页码: Article no.28402
Authors:  Zhang XB;  Wang XL;  Xiao HL;  Yang CB;  Hou QF;  Yin HB;  Chen H;  Wang ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
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Ingan  Solar Cell  Multiple Quantum Wells  In1-xgaxn Alloys  Band-gap  Inn  
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文
Cailiao Gongcheng/Journal of Materials Engineering, 2011, 期号: 8, 页码: 5-7+13
Authors:  Liu, Shi-Yong;  Zeng, Xiang-Bo;  Peng, Wen-Bo;  Yao, Wen-Jie;  Xie, Xiao-Bing;  Yang, Ping;  Wang, Chao;  Wang, Zhan-Guo;  Zeng, X.-B.(xbzeng@semi.ac.cn)
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Amorphous Films  Chemical Vapor Deposition  Energy Gap  High Resolution Electron Microscopy  High Resolution Transmission Electron Microscopy  Hydrogen  Nanocrystalline Silicon  Optical Band Gaps  Plasma Deposition  Plasma Enhanced Chemical Vapor Deposition  Raman Spectroscopy  Semiconducting Silicon Compounds  Solar Power Generation  Thin Films  Transmission Electron Microscopy  
The optimization of large gap-midgap ratio photonic crystal with improved Bisection-Particle Swarm Optimization 期刊论文
OPTICS COMMUNICATIONS, 2011, 卷号: 284, 期号: 1, 页码: 226-230
Authors:  Jiang B;  Liu AJ;  Chen W;  Xing MX;  Zhou WJ;  Zheng WH;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. whzheng@semi.ac.cn
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Particle Swarm Optimization  Bisection-particle Swarm Optimization  Gap-midgap Ratio  Band-gap  Emission  Defect